http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2630 3.8a, 100v, r ds(on) 110 m ? n-ch enhancement mode power mosfet 17-jun-2016 rev. b page 1 of 4 b l f h c j d g k a e 2630 = date code rohs compliant product a suffix of -c specifies halogen and lead-free description SST2630 provides designers with the best combinatio n of fast switching, low on-resistance and cost-effec tiveness. sot-26 package is universally used for all commerci al- industrial surface mount applications. features low on-resistance capable of 2.5v gate drive low drive current marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t a =25c 3.8 continuous drain current, v gs =10v 1 t a =70c i d 3 a pulsed drain current 3 i dm 14 a power dissipation t a =25c p d 2 w linear derating factor 0.016 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance from junction to ambient 1 r ja 62.5 c / w sot-26 d g d d d s millimeter millimeter ref. min. max. ref. min . max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2630 3.8a, 100v, r ds(on) 110 m ? n-ch enhancement mode power mosfet 17-jun-2016 rev. b page 2 of 4 electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v gs =20v t j =25 c - - 1 v ds =80v, v gs =0 drain-source leakage current t j =70 c i dss - - 25 a v ds =80v, v gs =0 - - 110 v gs =10v, i d =3.8a drain-source on-resistance r ds(on) 120 m v gs =4.5v, i d =2.5a total gate charge 2 q g - 25 - gate-source charge q gs - 3.7 - gate-drain (miller)charge q gd - 4.6 - nc v ds =80v v gs =10v i d =3a turn-on delay time 2 t d(on) - 4.2 - rise time t r - 8.2 - turn-off delay time t d(off) - 35.6 - fall time t f - 9.6 - ns v ds =50v v gs =10v r g =3.3 i d =3a input capacitance c iss - 1548 - output capacitance c oss - 60 - reverse transfer capacitance c rss - 36 - pf v gs =0v v ds =15v f=1mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =3.8a, v gs =0 notes: 1. surface mounted on a 1 inch 2 copper pad of fr4 board. the temperature is 156c/ w when the device is mounted on a minimum copper pad. 2. pulse width 300 Q s, duty cycle 2% Q 3. pulse width is limited by the maximum junction temperature.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2630 3.8a, 100v, r ds(on) 110 m ? n-ch enhancement mode power mosfet 17-jun-2016 rev. b page 3 of 4 characteristics curve
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2630 3.8a, 100v, r ds(on) 110 m ? n-ch enhancement mode power mosfet 17-jun-2016 rev. b page 4 of 4 characteristics curve
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